Canonical Schottky barrier heights of transition metal dichalcogenide monolayers in contact with a metal
نویسندگان
چکیده
منابع مشابه
Aging of Transition Metal Dichalcogenide Monolayers.
Two-dimensional sheets of transition metal dichalcogenides are an emerging class of atomically thin semiconductors that are considered to be "air-stable", similar to graphene. Here we report that, contrary to current understanding, chemical vapor deposited transition metal dichalcogenide monolayers exhibit poor long-term stability in air. After room-temperature exposure to the environment for s...
متن کاملSpin-orbit engineering in transition metal dichalcogenide alloy monolayers.
Binary transition metal dichalcogenide monolayers share common properties such as a direct optical bandgap, spin-orbit splittings of hundreds of meV, light-matter interaction dominated by robust excitons and coupled spin-valley states. Here we demonstrate spin-orbit-engineering in Mo(1-x)WxSe2 alloy monolayers for optoelectronics and applications based on spin- and valley-control. We probe the ...
متن کاملNonlinear Rashba spin splitting in transition metal dichalcogenide monolayers.
Single-layer transition-metal dichalcogenides (TMDs) such as MoS2 and MoSe2 exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonline...
متن کاملDynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers.
Current interest in two-dimensional (2D) materials is driven in part by the ability to dramatically alter their optoelectronic properties through strain and phase engineering. A combination of these approaches can be applied in quasi-2D transition metal dichalcogenide (TMD) monolayers to induce displacive structural transformations between semiconducting (H) and metallic/semimetallic (T') phase...
متن کاملMetal induced gap states and Schottky barrier heights at non–reactive GaN/noble metal interfaces
We present ab-initio local density FLAPW calculations on non–reactive N– terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.97.195315